| PART |
Description |
Maker |
| LD03YC104KAB2A LD02YC223KAB2A LD02YC103KAB2A |
CAP 0.1UF 16V 10% X7R SMD-0603 TR-7 5%-MIN-PB CAPACITOR, CERAMIC, MULTILAYER, 16 V, X7R, 0.1 uF, SURFACE MOUNT, 0603
CAP 0.022UF 16V 10% X7R SMD-0402 TR-7 5%-MIN-PB CAPACITOR, CERAMIC, MULTILAYER, 16 V, X7R, 0.022 uF, SURFACE MOUNT, 0402
CAP 0.01UF 16V 10% X7R SMD-0402 TR-7 5%-MIN-PB CAPACITOR, CERAMIC, MULTILAYER, 16 V, X7R, 0.01 uF, SURFACE MOUNT, 0402
|
AVX, Corp.
|
| L8828-04 L8828-06 L8828-07 L8828-41 L8828-42 L8828 |
Infrared detector module with preamp
CW LASER DIODES
CAP 18PF 50V 1% C0G SMD-0402 BULK SN100
CAPACITOR 10PF 5% 50V COG 0402
CAP CER 680PF 25V X7R 0201
CAP CER 330PF 16V X7R 0201
CAP CER 220PF 16V X7R 0201
CAP CER 470PF 16V 10% X7R 0201
CAP CER 110PF 50V C0G 0402
CAP CER 100PF 16V 10% X7R 0201
CAP CER 100PF 25V X7R 0201
CAP 100PF 50V 5% C0G SMD-0402 TR-7-PA SN100
CAP CER 680PF 16V 10% X7R 0201
CABLE SMA PLUG-PLUG HF-.086 24,1 连续激光二极管
CABLE SMA PLUG-PLUG HF-.141 3,1 连续激光二极管
CAP CER 3300PF 16V X7R 0201 连续激光二极管
|
http://
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics K.K.
|
| MBRB30H150CT-1 MBRF30H150CT MBR30H150CT MBR30H150C |
27PF 5% 50V NPO MLCC 0402 CAP,50V,NPO SMD, 0402
Dual High-Voltage Schottky Rectifiers, Forward Current 30A, Reverse Voltage 150V
Diodes
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| RF3375 RF337XPCBA-41X |
CAPACITOR, 100UF 16VCAPACITOR, 100UF 16V; Capacitance:100uF; Voltage rating, DC:16V; Capacitor dielectric type:; Series:SVP; Temp, op. max:105(degree C); Temp, op. min:-55(degree C); Tolerance, :20%; Tolerance, -:20%; Current,
GENERAL PURPOSE AMPLIFIER
|
RF Micro Devices, Inc.
|
| PZTA44 PZTA44_4 PZTA44115 |
NPN high-voltage transistor - fT min: 20 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 1350 mW; VCEO max: 400 V; Package: SOT223 (SC-73); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| SOT-143 |
A : MIN 0.900 MAX 1.150 A1 : MIN 0.000 MAX 0.100
|
Analog Microelectronics
|
| GRM155R71C104K |
Chip Monolithic Ceramic Capacitor 0402 X7R 0.1μF 16V
Chip Monolithic Ceramic Capacitor 0402 X7R 0.1レF 16V
|
Murata Manufacturing Co., Ltd.
|
| M28W320EBB85ZB1T M28W320EBT85N1T M28W320EBB85N1T M |
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 12.7 V; VZ min.: 11.4 V; VZ nom: 12 V
surface mount silicon Zener diodes
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 15.6 V; VZ min.: 13.8 V; VZ nom: 15 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 11.6 V; VZ min.: 10.4 V; VZ nom: 11 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 10.6 V; VZ min.: 9.4 V; VZ nom: 10 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.5 V; VZ min.: 3.1 V; VZ nom: 3.3 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 14.1 V; VZ min.: 12.4 V; VZ nom: 13 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.6 V; VZ min.: 2.2 V; VZ nom: 2.4 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.9 V; VZ min.: 2.5 V; VZ nom: 2.7 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.2 V; VZ min.: 2.8 V; VZ nom: 3 V
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位（处理器x16插槽，引导块V电源快闪记忆
|
意法半导
STMicroelectronics N.V.
|
| PMBTA92 PMBTA92215 PMBTA92-T |
100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP high-voltage transistor - Complement: PMBTA42 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP Semiconductors
|
| KN3904S |
CAP 5.6PF 50V /-0.1PF NPO(C0G) SMD-0402 TR-7-PA LOW-ESR 外延平面NPN晶体管（通用，开关）
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| TSOT-23 |
MILLIMETERS MIN 0.80 MAX 1.30 INCHES MIN 0.0315 MAX 0.0512
|
Analog Microelectronics
|
